Device design and optimization of CNTFETs for high-frequency applications

Abstract Carbon nanotube (CNT) field-effect transistors (FETs) have recently reached high-frequency (HF) performance similar to that of silicon RF-CMOS at the same gate length despite a tube density and current per are far from physical limits suboptimal device architecture. This work reports on an investigation optimal design for practical HF applications in terms cut-off frequencies, power gain, linearity. Different fundamental designs contact arrangement considered based 3D simulation both CNTs contacts. First, unit cells with single CNT minimal sizes compared. The resulting data then extended toward structure two fingers realistic sizes. Corresponding parasitic capacitances, as well series resistances, been included obtaining characteristics figures merit can be used comparison corresponding RF MOSFETs. Finally, sensitivity analysis architecture highest is performed order find space.